Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures

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DC 欄位	值	語言
dc.contributor.author	Lin, You-Da	en_US
dc.contributor.author	Wu, Yewchung Sermon	en_US
dc.date.accessioned	2014-12-08T15:15:51Z	-
dc.date.available	2014-12-08T15:15:51Z	-
dc.date.issued	2006-09-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11831	-
dc.description.abstract	Effects of oxygen in Ni films on. the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.	en_US
dc.language.iso	en_US	en_US
dc.subject	nickel-induced lateral crystallization (NILC)	en_US
dc.subject	amorphous silicon	en_US
dc.subject	polycrystalline silicon	en_US
dc.subject	oxygen	en_US
dc.subject	nickel oxide	en_US
dc.title	Effects of oxygen in Ni films on Ni-induced lateral crystallization of amorphous silicon films at various temperatures	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	35	en_US
dc.citation.issue	9	en_US
dc.citation.spage	1708	en_US
dc.citation.epage	1711	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000240529900004	-
dc.citation.woscount	2	-
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