The effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn films

Abstract

The thermal stability of a multilayer structure of protection layer/Co(90)Fe(10)/Os (d nm)/Os(20)Mn(80) has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co(90)Fe(10)/Os(20)Mn(80) interface shows better thermal stability. No diffusion evidence was found for samples with d >= 0:3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 degrees C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing. (C) 2006 Elsevier B.V. All rights reserved.