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dc.contributor.authorPeng, Tai-Yenen_US
dc.contributor.authorLo, C. K.en_US
dc.contributor.authorChen, San-Yuanen_US
dc.contributor.authorYao, Y. D.en_US
dc.date.accessioned2014-12-08T15:15:52Z-
dc.date.available2014-12-08T15:15:52Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0304-8853en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jmmm.2006.01.173en_US
dc.identifier.urihttp://hdl.handle.net/11536/11844-
dc.description.abstractThe thermal stability of a multilayer structure of protection layer/Co(90)Fe(10)/Os (d nm)/Os(20)Mn(80) has been studied as functions of annealing temperature (Tan) and thickness of Osmium (Os) layer. The insertion of a thin Os layer between the Co(90)Fe(10)/Os(20)Mn(80) interface shows better thermal stability. No diffusion evidence was found for samples with d >= 0:3 nm as examined by Auger electron spectroscopy depth profile at different annealing temperatures up to 400 degrees C. These samples with Os layer showed the same magnetic behavior and the hysteresis loop with squareness (S) larger than 0.9 were observed before and after annealing. (C) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectThermal stabilityen_US
dc.subjectOs interlayeren_US
dc.subjectMn diffusionen_US
dc.subjectCoFe/Os/OsMnen_US
dc.subjectCoFe/Os/IrMnen_US
dc.titleThe effect of Os interlayers on the thermal stability of magnetic CoFe/OsMn filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jmmm.2006.01.173en_US
dc.identifier.journalJOURNAL OF MAGNETISM AND MAGNETIC MATERIALSen_US
dc.citation.volume304en_US
dc.citation.issue1en_US
dc.citation.spageE50en_US
dc.citation.epageE52en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000207211700017-
dc.citation.woscount6-
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