标题: Resistive switching mechanisms of V-doped SrZrO3 memory films
作者: Lin, Chun-Chieh
Tu, Bing-Chung
Lin, Chao-Cheng
Lin, Chen-Hsi
Tseng, Tseung-Yuen
电子工程学系及电子研究所
Department of Electronics Engineering and Institute of Electronics
关键字: conduction mechanism;nonvolatile memory (NVM);resistive random access memory (RRAM);resistive switching;SrZrO3
公开日期: 1-九月-2006
摘要: The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory.
URI: http://dx.doi.org/10.1109/LED.2006.880660
http://hdl.handle.net/11536/11849
ISSN: 0741-3106
DOI: 10.1109/LED.2006.880660
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 9
起始页: 725
结束页: 727
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