标题: | Resistive switching mechanisms of V-doped SrZrO3 memory films |
作者: | Lin, Chun-Chieh Tu, Bing-Chung Lin, Chao-Cheng Lin, Chen-Hsi Tseng, Tseung-Yuen 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | conduction mechanism;nonvolatile memory (NVM);resistive random access memory (RRAM);resistive switching;SrZrO3 |
公开日期: | 1-九月-2006 |
摘要: | The resistive switching behaviors of sputtered V-doped SrZrO3 (V:SZO) memory films were investigated in this letter. The current states of the memory films were switched between high current state (H-state) and low current state (L-state). The resistance ratio of the two current states was over 1000 at a read voltage. The switching mechanism from L- to H-state corresponds to the formation of current paths. However, this mechanism from H- to L-state is thought to be due to the fact that the defects present in the V:SZO film randomly trap electrons, and hence, the current paths are ruptured. The conduction mechanism of the H-state is dominated by ohmic conduction, whereas the L-state conduction is dominated by Frenkel-Poole emission. The polarity direction of the resistive switching is an intrinsic property of the SrZrO3 oxides. The V:SZO films with high uniformity and good stability are expected to be used in nonvolatile memory. |
URI: | http://dx.doi.org/10.1109/LED.2006.880660 http://hdl.handle.net/11536/11849 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2006.880660 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 27 |
Issue: | 9 |
起始页: | 725 |
结束页: | 727 |
显示于类别: | Articles |
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