Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy

doi:10.1063/1.2345031

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DC Field	Value	Language
dc.contributor.author	Lin, S. D.	en_US
dc.contributor.author	Lin, Z. C.	en_US
dc.contributor.author	Lee, C. P.	en_US
dc.date.accessioned	2014-12-08T15:15:56Z	-
dc.date.available	2014-12-08T15:15:56Z	-
dc.date.issued	2006-09-01	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2345031	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11877	-
dc.description.abstract	Self-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Transmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxy	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2345031	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	100	en_US
dc.citation.issue	5	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000240602500105	-
dc.citation.woscount	0	-
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