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dc.contributor.authorLin, S. D.en_US
dc.contributor.authorLin, Z. C.en_US
dc.contributor.authorLee, C. P.en_US
dc.date.accessioned2014-12-08T15:15:56Z-
dc.date.available2014-12-08T15:15:56Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2345031en_US
dc.identifier.urihttp://hdl.handle.net/11536/11877-
dc.description.abstractSelf-assembled GaAs nanostructures in In0.53Ga0.47As matrix on (100) InP substrate have been investigated using atomic force microscopy (AFM) and cross-sectional transmission electron microscopy (XTEM). In measured AFM images, dotlike and wirelike GaAs nanostructures were obtained with different deposition thicknesses. The XTEM images clearly showed composition modulation in the overgrown InGaAs matrix. The reason for this composition modulation is explained by strain field compensation and surface energy minimization. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleTransmission electron microscopy studies of GaAs nanostructures in InGaAs/InP matrix grown by molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2345031en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume100en_US
dc.citation.issue5en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240602500105-
dc.citation.woscount0-
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