標題: Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals
作者: Lin, Gong-Ru
Lin, Chun-Jung
Chou, Li-Jen
Chueh, Yu-Lun
材料科學與工程學系
光電工程學系
Department of Materials Science and Engineering
Department of Photonics
關鍵字: CO2 laser annealing;microphotoluminescence;nanotechnology;Si nanocrystal;SiOx
公開日期: 1-九月-2006
摘要: The optical properties of a SiOx film rapid-thermal-annealed (RTA) by CO2 laser are primarily investigated. The microphotoluminescence (mu-PL) and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the precipitation of random-oriented Si nanocrystals can be initiated when laser intensity (P-laser) is larger than 4.5 kW/cm(2). At P-laser of 6 kW/cm(2), the Si nanocrystal exhibits a largest diameter of 8 run and a highest density of 4.5 x 10(16) cm(-3), which emits strong PL at 790-825 nm. The microphotoreflectance of the CO2 laser RTA SiOx film reveals a volume density product dependent refractive index increasing from 1.57 to 1.87 as P-laser increases from 1.5 to 7.5 kW/cm(2). Nonetheless, the laser ablation of the SiOx film occurs with a linear ablation slope of 35 nm/kW/cm(2) at beyond 7.5 kW/cm(2), which terminates the enlargement of Si nanocrystals, degrades the near-infrared PL, and slightly reduces the refractive index of the CO2 laser RTA SiOx film.
URI: http://dx.doi.org/10.1109/TNANO.2006.877426
http://hdl.handle.net/11536/11880
ISSN: 1536-125X
DOI: 10.1109/TNANO.2006.877426
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 5
Issue: 5
起始頁: 511
結束頁: 516
顯示於類別:期刊論文


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