標題: | Microphotoluminescence and microphotoreflectance analyses of CO2 laser rapid-thermal-annealed SiOx surface with buried Si nanocrystals |
作者: | Lin, Gong-Ru Lin, Chun-Jung Chou, Li-Jen Chueh, Yu-Lun 材料科學與工程學系 光電工程學系 Department of Materials Science and Engineering Department of Photonics |
關鍵字: | CO2 laser annealing;microphotoluminescence;nanotechnology;Si nanocrystal;SiOx |
公開日期: | 1-九月-2006 |
摘要: | The optical properties of a SiOx film rapid-thermal-annealed (RTA) by CO2 laser are primarily investigated. The microphotoluminescence (mu-PL) and high-resolution transmission electron microscopy (HRTEM) analyses indicate that the precipitation of random-oriented Si nanocrystals can be initiated when laser intensity (P-laser) is larger than 4.5 kW/cm(2). At P-laser of 6 kW/cm(2), the Si nanocrystal exhibits a largest diameter of 8 run and a highest density of 4.5 x 10(16) cm(-3), which emits strong PL at 790-825 nm. The microphotoreflectance of the CO2 laser RTA SiOx film reveals a volume density product dependent refractive index increasing from 1.57 to 1.87 as P-laser increases from 1.5 to 7.5 kW/cm(2). Nonetheless, the laser ablation of the SiOx film occurs with a linear ablation slope of 35 nm/kW/cm(2) at beyond 7.5 kW/cm(2), which terminates the enlargement of Si nanocrystals, degrades the near-infrared PL, and slightly reduces the refractive index of the CO2 laser RTA SiOx film. |
URI: | http://dx.doi.org/10.1109/TNANO.2006.877426 http://hdl.handle.net/11536/11880 |
ISSN: | 1536-125X |
DOI: | 10.1109/TNANO.2006.877426 |
期刊: | IEEE TRANSACTIONS ON NANOTECHNOLOGY |
Volume: | 5 |
Issue: | 5 |
起始頁: | 511 |
結束頁: | 516 |
顯示於類別: | 期刊論文 |