Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.

doi:10.1143/JJAP.45.6902

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yang, Wen-Luh	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.contributor.author	Chen, Shine-China	en_US
dc.contributor.author	Yang, Chin-Hao	en_US
dc.contributor.author	Peng, Wu-Chin	en_US
dc.date.accessioned	2014-12-08T15:15:57Z	-
dc.date.available	2014-12-08T15:15:57Z	-
dc.date.issued	2006-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.45.6902	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11884	-
dc.description.abstract	A new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (< 10(-9) A) and a high breakdown voltage (> 25 MV/cm(2)). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	high-k	en_US
dc.subject	NiTiO	en_US
dc.subject	MIM	en_US
dc.title	Improving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.45.6902	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS	en_US
dc.citation.volume	45	en_US
dc.citation.issue	9A	en_US
dc.citation.spage	6902	en_US
dc.citation.epage	6904	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000240806800024	-
dc.citation.woscount	2	-
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