1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.contributor.authorChen, Shine-Chinaen_US
dc.contributor.authorYang, Chin-Haoen_US
dc.contributor.authorPeng, Wu-Chinen_US
dc.date.accessioned2014-12-08T15:15:57Z-
dc.date.available2014-12-08T15:15:57Z-
dc.date.issued2006-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.6902en_US
dc.identifier.urihttp://hdl.handle.net/11536/11884-
dc.description.abstractA new high-dielectric-constant (k) NiTiO dielectric film with a low temperature has been investigated for the first time. The k of the NiTiO film was estimated to be larger than 40. The roughness of the NiTiO dielectric film to nitrogen ion implantation (I/I) was uniform, thus causing a low leakage current (< 10(-9) A) and a high breakdown voltage (> 25 MV/cm(2)). These results are superior to those reported in the literature, suggesting a potential use of the NiTiO film as dielectric for future RF/mixed IC applications.en_US
dc.language.isoen_USen_US
dc.subjecthigh-ken_US
dc.subjectNiTiOen_US
dc.subjectMIMen_US
dc.titleImproving electrical characteristics of high-k NiTiO dielectric with nitrogen ion implantation.en_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.6902en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue9Aen_US
dc.citation.spage6902en_US
dc.citation.epage6904en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000240806800024-
dc.citation.woscount2-
Appears in Collections:Articles


Files in This Item:

  1. 000240806800024.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...