Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer

doi:10.1063/1.2338567

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lien, Yi-Chung	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Chen, Szu-Hung	en_US
dc.contributor.author	Chu, Li-Hsin	en_US
dc.contributor.author	Chen, Po-Chou	en_US
dc.contributor.author	Hsieh, Yen-Chang	en_US
dc.date.accessioned	2014-12-08T15:16:01Z	-
dc.date.available	2014-12-08T15:16:01Z	-
dc.date.issued	2006-08-21	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2338567	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11906	-
dc.description.abstract	Electrical characteristics and thermal stability of the Ti/Pt/Cu Schottky contact on InAlAs were investigated. The Ti/Pt/Cu Schottky contact had comparable electrical properties compared to the conventional Ti/Pt/Au contact after annealing. As judged from the material analysis, the Ti/Pt/Cu on InAlAs after 350 degrees C annealing showed no diffusion sign into the InAlAs. After 400 degrees C annealing, the interfacial mixing of Cu and the underlying layers occurred and resulted in the formation of Cu4Ti. The results show that Ti/Pt/Cu Schottky contact using platinum as the diffusion barrier is very stable up to 350 degrees C annealing and can be used for InAlAs/InGaAs high-electron mobility transistors and monolithic microwave integrated circuits. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Thermal stability of Ti/Pt/Cu Schottky contact on InAlAs layer	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2338567	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	8	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000240035400115	-
dc.citation.woscount	3	-
顯示於類別：	期刊論文

文件中的檔案：

000240035400115.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。