標題: Effects of processing variables on tantalum nitride by reactive-ion-assisted magnetron sputtering deposition
作者: Wei, Chao-Tsang
Shieh, Han-Ping D.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: sputtering deposition;molding dies;temary compounds;nitrides;compression stress
公開日期: 1-Aug-2006
摘要: The binary compound tantalum nitride (TaN) and ternary compounds tantalum tungsten nitrides (Ta1-xWxNy) exhibit interesting properties such as high melting point, high hardness, and chemical inertness. Such nitrides were deposited on a tungsten carbide (WC) die and silicon wafers by ion-beam-sputter evaporation of the respective metal under nitrogen ion-assisted deposition (IAD). The effects of N-2/Ar flux ratio, post annealing, ion-assisted deposition, deposition rate, and W doping in coating processing variables on hardness, load critical scratching, oxidation resistance, stress and surface roughness were investigated. The optimum N-2/Ar flux ratios in view of the hardness and critical load of TaN and Ta(1-x)W(x)Ny films were ranged from 0.9 to 1.0. Doping W into TaN to form Ta1-xWxPy films led significant increases in hardness' critical load, oxidation resistance, and reduced surface roughness. The optimum doping ratio was [W/(W + Ta)] = 0.85. From the deposition rate and IAD experiments, the stress in the films is mainly contributed by sputtering atoms. The lower deposition rate at a high N-2/Nr flux ratio resulted in a higher compressive stress. A high compressive residual stress accounts for a high hardness. The relatively high compressive stress Was attributed primarily to peening by atoms, ions and electrons during film growth, the Ta1-xWxNy films showed excellent hardness and strength against a high temperature, and sticking phenomena can essentially be avoided through their use. Ta1-xWxNy films showed better performance than the TaN film in terms of mechanical properties and oxidation resistance.
URI: http://dx.doi.org/10.1143/JJAP.45.6405
http://hdl.handle.net/11536/11950
ISSN: 0021-4922
DOI: 10.1143/JJAP.45.6405
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 45
Issue: 8A
起始頁: 6405
結束頁: 6410
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