Control ability of spin coating planarization of resist film and optimal control of developers

Abstract

The issue of how to transfer a pattern onto a wafer during photolithography is very important. Normally, the resist is treated as a pattern-transferring medium. Such a medium should have a very smooth surface to reduce the focus error. In this experiment, spin coating is used. The velocity of the center differs from that of the outer edges of a rotating disk, so a perfectly smooth surface cannot be obtained. Therefore, resist temperature, cooling temperature, heating temperature, cup temperature, cup humidity and exhaust pressure were controlled to eliminate this imperfection to yield an acceptable error. A lower cooling temperature yields a thicker center, such that the surface of the wafer protrudes at the center. A lower cooling temperature also corresponds to a thicker center, with the same effect. The cup temperature was set to the cooling temperature so that thickness distribution would be the same as. A higher heating temperature yields a thinner wafer. Higher humidity yields a thinner wafer. (c) 2005 Elsevier Ltd. All rights reserved.