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dc.contributor.authorChou, C. K.en_US
dc.contributor.authorHsu, Y. C.en_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:16:08Z-
dc.date.available2014-12-08T15:16:08Z-
dc.date.issued2006-08-01en_US
dc.identifier.issn0361-5235en_US
dc.identifier.urihttp://hdl.handle.net/11536/11961-
dc.description.abstractElectromigration (EM) parameters in the eutectic SnPb solder were measured using the edge displacement method (EDM) and an atomic force microscope (AFM) in the temperature range of 60 degrees to 140 degrees C. The measured drift velocity was found to be 0.3 A/sec when the solder stripe was stressed under 4.9 x 104 A/cm(2) at 80 degrees C, and it increased as the current density or the temperature increased. The products of DZ* at 60 degrees C, 80 degrees C, 100 degrees C, 120 degrees C, and 140 degrees C were also obtained. In addition, the EM activation energy was determined to be 0.45 eV at the temperature range 60-100 degrees C and 0.55 eV at the temperature range 100-140 degrees C. These two activation energies may correspond to the Sn and Pb diffusion at the two temperature ranges. These values are very fundamental to current-carrying capability and mean-time-to-failure measurement for solder joints.en_US
dc.language.isoen_USen_US
dc.subjectelectromigration (EM)en_US
dc.subjectflip-chip solderen_US
dc.subjectpackagingen_US
dc.titleStudy of electromigration in eutectic SnPb solder stripes using the edge displacement methoden_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF ELECTRONIC MATERIALSen_US
dc.citation.volume35en_US
dc.citation.issue8en_US
dc.citation.spage1655en_US
dc.citation.epage1659en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000240072400009-
dc.citation.woscount2-
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