標題: | SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating method |
作者: | You, Hsin-Chiang Hsu, Tze-Hsiang Ko, Fu-Hsiang Huang, Jiang-Wen Yang, Wen-Luh Lei, Tan-Fu 材料科學與工程學系奈米科技碩博班 電子工程學系及電子研究所 Graduate Program of Nanotechnology , Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
關鍵字: | charge retention;endurance;HfO2;sol-gel spin coating;silicon-oxide-nitride-oxide-silicon (SONOS)-like memory |
公開日期: | 1-八月-2006 |
摘要: | In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon(SONOS)-like memory using an HfO2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degrees C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HVO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 10(4) s with only 6% charge loss and long endurance program/erase cycles up to 10(5). |
URI: | http://dx.doi.org/10.1109/LED.2006.879026 http://hdl.handle.net/11536/11968 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2006.879026 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 27 |
Issue: | 8 |
起始頁: | 653 |
結束頁: | 655 |
顯示於類別: | 期刊論文 |