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dc.contributor.authorYou, Hsin-Chiangen_US
dc.contributor.authorHsu, Tze-Hsiangen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.contributor.authorHuang, Jiang-Wenen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:16:08Z-
dc.date.available2014-12-08T15:16:08Z-
dc.date.issued2006-08-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2006.879026en_US
dc.identifier.urihttp://hdl.handle.net/11536/11968-
dc.description.abstractIn this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon(SONOS)-like memory using an HfO2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degrees C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HVO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 10(4) s with only 6% charge loss and long endurance program/erase cycles up to 10(5).en_US
dc.language.isoen_USen_US
dc.subjectcharge retentionen_US
dc.subjectenduranceen_US
dc.subjectHfO2en_US
dc.subjectsol-gel spin coatingen_US
dc.subjectsilicon-oxide-nitride-oxide-silicon (SONOS)-like memoryen_US
dc.titleSONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating methoden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2006.879026en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume27en_US
dc.citation.issue8en_US
dc.citation.spage653en_US
dc.citation.epage655en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000239440700007-
dc.citation.woscount54-
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