Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement

doi:10.1063/1.2335374

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Szu-Yi	en_US
dc.contributor.author	Chu, Ta-Ya	en_US
dc.contributor.author	Chen, Jenn-Fang	en_US
dc.contributor.author	Su, Chien-Ying	en_US
dc.contributor.author	Chen, Chin H.	en_US
dc.date.accessioned	2014-12-08T15:16:10Z	-
dc.date.available	2014-12-08T15:16:10Z	-
dc.date.issued	2006-07-31	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2335374	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11997	-
dc.description.abstract	Stable inverted bottom-emitting organic light-emitting diodes (IBOLEDs) have been investigated by inserting n-type Cs2O dopant between indium-tin oxide bottom cathode and Alq(3), the combination of which not only improved the morphology of organic layer but enhanced the lifetime of the IBOLED. This n-type doped IBOLED achieved efficiencies of 5.2 cd/A and 2.0 lm/W at 20 mA/cm(2). The 20% decay lifetime (t(80)) of Cs2O doped IBOLED is 270 h which is about 1.7 times more stable than that of the conventional OLED (160 h) and 2.5 times of Li doped IBOLED (104 h). (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Stable inverted bottom-emitting organic electroluminescent devices with molecular doping and morphology improvement	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2335374	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	89	en_US
dc.citation.issue	5	en_US
dc.citation.epage		en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000239520200117	-
dc.citation.woscount	28	-
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