完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Nguyen, T. P. | en_US |
dc.contributor.author | Le Rendu, P. | en_US |
dc.contributor.author | Gaudin, O. | en_US |
dc.contributor.author | Lee, A. J. T. | en_US |
dc.contributor.author | Jackman, R. B. | en_US |
dc.contributor.author | Huang, C. H. | en_US |
dc.date.accessioned | 2014-12-08T15:16:10Z | - |
dc.date.available | 2014-12-08T15:16:10Z | - |
dc.date.issued | 2006-07-26 | en_US |
dc.identifier.issn | 0040-6090 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.tsf.2005.12.033 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12007 | - |
dc.description.abstract | in this study, application of the charge based Deep Level Transient Spectroscopy (Q-DLTS) has been extended to poly(2-methoxy,5-(2ethylhexyloxy)-1,4-phenylene vinylene) (MEH-PPV) single layer diodes, whose cathode consisted of aluminium and anode of indium tin oxide (ITO). The results reveal a broad Q-DLTS spectrum, with at least two maxima, consistent with a complex distribution of trap states. Only the Q-DLTS maximum with the shortest relaxation time could be fully resolved over the temperature range used here (100-300 K), yielding activation energies and capture cross sections in the ranges 0.3-0.4 eV and 10(-20) 10(-18) cm(2), respectively. It will be shown that this energy level is likely related to a majority-carrier (hole) trap, consistent with a Poole-Frenkel injection mechanism and p-type doping of the MEH-PPV film. The origin of the second (non-resolved) Q-DLTS peak will also be discussed. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | traps | en_US |
dc.subject | MEH-PPV | en_US |
dc.subject | DLTS | en_US |
dc.title | Defect states investigation in poly(2-methoxy,5-(2 ' ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.tsf.2005.12.033 | en_US |
dc.identifier.journal | THIN SOLID FILMS | en_US |
dc.citation.volume | 511 | en_US |
dc.citation.issue | en_US | |
dc.citation.spage | 338 | en_US |
dc.citation.epage | 341 | en_US |
dc.contributor.department | 應用化學系 | zh_TW |
dc.contributor.department | Department of Applied Chemistry | en_US |
dc.identifier.wosnumber | WOS:000238249000068 | - |
顯示於類別: | 會議論文 |