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dc.contributor.authorSun, SCen_US
dc.contributor.authorChen, TFen_US
dc.date.accessioned2014-12-08T15:02:33Z-
dc.date.available2014-12-08T15:02:33Z-
dc.date.issued1996-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.506365en_US
dc.identifier.urihttp://hdl.handle.net/11536/1200-
dc.description.abstractThis study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.en_US
dc.language.isoen_USen_US
dc.titleLeakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2Oen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.506365en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume17en_US
dc.citation.issue7en_US
dc.citation.spage355en_US
dc.citation.epage357en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentNano Facility Centeren_US
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