Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O

doi:10.1109/55.506365

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Chen, TF	en_US
dc.date.accessioned	2014-12-08T15:02:33Z	-
dc.date.available	2014-12-08T15:02:33Z	-
dc.date.issued	1996-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.506365	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1200	-
dc.description.abstract	This study aims to improve the electrical characteristics and reliability of low-pressure chemical vapor deposited (LPCVD) Ta2O5 films by developing a new postdeposition single-step annealing technique. Experimental results indicate that excited oxygen atoms generated by N2O decomposition can effectively repair the oxygen vacancies in the as-deposited CVD Ta2O5 film, thereby resulting in a remarkable reduction of the film's leakage current. Two other post-deposition annealing conditions are compared: rapid thermal O-2 annealing and furnace dry-O-2 annealing. The comparison reveals that RTN(2)O annealing has the lowest leakage current, superior thermal stability of electrical characteristics and the best time-dependent dielectric breakdown (TDDB) reliability.	en_US
dc.language.iso	en_US	en_US
dc.title	Leakage current reduction in chemical-vapor-deposited Ta2O5 films by rapid thermal annealing in N2O	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.506365	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	17	en_US
dc.citation.issue	7	en_US
dc.citation.spage	355	en_US
dc.citation.epage	357	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Nano Facility Center	en_US
顯示於類別：	期刊論文

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