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dc.contributor.authorWang, Wei-Linen_US
dc.contributor.authorHo, Yen-Tengen_US
dc.contributor.authorChiu, Kun-Anen_US
dc.contributor.authorPeng, Chun-Yenen_US
dc.contributor.authorChang, Lien_US
dc.date.accessioned2014-12-08T15:16:11Z-
dc.date.available2014-12-08T15:16:11Z-
dc.date.issued2010-04-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2009.12.050en_US
dc.identifier.urihttp://hdl.handle.net/11536/12011-
dc.description.abstractThe microstructure of m-plane (1 0 (1) over bar 0) ZnO grown on LaAlO(3) (1 1 2) (LAO (1 1 2)) substrate by pulsed laser deposition method has been investigated using X-ray diffraction (XRD) and transmission electron microscopy (TEM). XRD shows that ZnO grown on LAO(1 1 2) appears to be oriented in pure m-plane. TEM electron diffraction patterns in cross section illustrate that m-plane ZnO is in epitaxy with LAO (1 1 2), and the orientation relationships are determined to be [1 (2) over bar 1 0](ZnO)//[(1) over bar (1) over bar 1 ](LAO) and [0 0 0 1](ZnO)//[(1) over bar 1 0](LAO). Also, TEM shows that most of threading dislocations (TDs) in a-type are mainly distributed as wiggle-like lines. From the observations in plan-view TEM, the densities of TDs and basal stacking faults are approximately estimated to be 5.1 x 10(10) cm(-2) and 4.3 x 10(5) cm(-1), respectively. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleStructural property of m-plane ZnO epitaxial film grown on LaAlO(3) (112) substrateen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2009.12.050en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume312en_US
dc.citation.issue8en_US
dc.citation.spage1179en_US
dc.citation.epage1182en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
Appears in Collections:Conferences Paper