完整后设资料纪录
DC 栏位语言
dc.contributor.authorPan, Tsai-Shengen_US
dc.contributor.authorChang, Li-Chunen_US
dc.contributor.authorHo, Chia-Chengen_US
dc.contributor.authorChiou, Bi-Shiouen_US
dc.date.accessioned2014-12-08T15:16:11Z-
dc.date.available2014-12-08T15:16:11Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1636-3en_US
dc.identifier.urihttp://hdl.handle.net/11536/12012-
dc.description.abstractVoltage controlled oscillator (VCO) is the most ubiquitous element in all communication systems, wired or wireless. In a wireless system the quality of the communication link is determined in large part by the characteristics of the VCO. The capacitance of metal/insulator/semiconductor (MIS) shows larger variation from the accumulation region to the depletion region. The dielectric constant of hafnium dioxide is larger (around 25) than that Of SiO2 (similar to 3.9). Al/Hafnium oxide (HfO2)/Si show a field dependent permittivity and can be used as a dielectric in voltage tunable capacitors. In this work, we used two types of tunable capacitor in the VCO(LC tank and Colpitts circuit) integrated within PCB: one is Al/HfO2/Si (HfO) capacitor, the other one is Philips BB 135 p-n junction capacitor for a control. The maximum MIS capacitance ratio is 4.25. The Al/HfO2/Si capacitors are then implemented as the varactor in the VCO circuit.en_US
dc.language.isoen_USen_US
dc.subjectvoltage controlled oscillatoren_US
dc.subjectvaractorsen_US
dc.subjectferroelectric filmsen_US
dc.subjectharmonic distortionen_US
dc.titleStudy on the voltage-controlled-oscillator circuit implemented with Al/HfO2/Si capacitorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage153en_US
dc.citation.epage156en_US
dc.contributor.department电子工程学系及电子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000253090500034-
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