統計資料
總造訪次數
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| Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface | 117 |
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| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
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| Improved luminance intensity of InGaN-GaN light-emitting diode by roughening both the p-GaN surface and the undoped-GaN surface | 0 | 0 | 0 | 1 | 0 | 0 | 0 |
檔案下載
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| 000239376500016.pdf | 23 |
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