Surface KOH treatment in AlGaN-based photodiodes

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DC 欄位	值	語言
dc.contributor.author	Lan, W. -H.	en_US
dc.contributor.author	Huang, K. -C.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:16:12Z	-
dc.date.available	2014-12-08T15:16:12Z	-
dc.date.issued	2006-07-06	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20061088	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12036	-
dc.description.abstract	KOH treatment is investigated as a method to improve the IN characteristics of AIGaN-based photodiodes. The defects in the photodiode may enhance the dark current, and cause some photocurrents with incident photon energy less than the absorption edge. With the KOH treatment in the process, the defects and whisker-like features could be reduced. High rejection ratio in the spectral responsivity could be achieved. The KOH treatment is a good method to reduce the surface defects in AlGaN-based photodiodes.	en_US
dc.language.iso	en_US	en_US
dc.title	Surface KOH treatment in AlGaN-based photodiodes	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20061088	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	42	en_US
dc.citation.issue	14	en_US
dc.citation.spage	821	en_US
dc.citation.epage	822	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000239467500026	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文

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