Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lu, Ching-Sen	en_US
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Lee, Yao-Jen	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2014-12-08T15:16:17Z	-
dc.date.available	2014-12-08T15:16:17Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-1891-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12067	-
dc.language.iso	en_US	en_US
dc.title	Impacts of precursor flow rate and temperature of PECVD-SiN capping films on strained-channel NMOSFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2	en_US
dc.citation.spage	335	en_US
dc.citation.epage	336	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000255857100172	-
顯示於類別：	會議論文