High-peak-power AlGaInAs quantum-well 1.3-mu m laser pumped by a diode-pumped actively Q-switched solid-state laser

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DC 欄位	值	語言
dc.contributor.author	Su, KW	en_US
dc.contributor.author	Huang, SC	en_US
dc.contributor.author	Li, A	en_US
dc.contributor.author	Liu, SC	en_US
dc.contributor.author	Chen, YF	en_US
dc.contributor.author	Huang, KF	en_US
dc.date.accessioned	2014-12-08T15:16:17Z	-
dc.date.available	2014-12-08T15:16:17Z	-
dc.date.issued	2006-07-01	en_US
dc.identifier.issn	0146-9592	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OL.31.002009	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12072	-
dc.description.abstract	We report a room-temperature high-peak-power AlGaInAs 1.36 mu m TEMOO laser pumped by a diode-pumped actively Q-switched Nd:YAG 1.06 mu m laser. With an average pump power of 1.0 W, an average output power of 140 mW was obtained at a pulse repetition rate of 10 kHz. With a peak pump power of 8.3 kW, the highest peak output power was 1.5 kW at a pulse repetition rate of 5 kHz. (c) 2006 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	High-peak-power AlGaInAs quantum-well 1.3-mu m laser pumped by a diode-pumped actively Q-switched solid-state laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OL.31.002009	en_US
dc.identifier.journal	OPTICS LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	13	en_US
dc.citation.spage	2009	en_US
dc.citation.epage	2011	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000238494600023	-
dc.citation.woscount	8	-
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