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dc.contributor.authorTu, Y. H.en_US
dc.contributor.authorKwei, C. M.en_US
dc.contributor.authorLi, Y. C.en_US
dc.contributor.authorTung, C. J.en_US
dc.date.accessioned2019-04-03T06:45:09Z-
dc.date.available2019-04-03T06:45:09Z-
dc.date.issued2006-07-01en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.74.045403en_US
dc.identifier.urihttp://hdl.handle.net/11536/12096-
dc.description.abstractInelastic interactions between an electron and a clad cylindrical system were investigated using the dielectric response theory. By solving the Poisson equation and applying the boundary conditions, these interactions were formulated in terms of the surface, interface and volume excitations. Formulas of the differential inverse inelastic mean free path (DIIMFP) were derived for electrons moving parallel to the axis of such a cylindrical structure. A sum-rule-constrained extended Drude dielectric function with spatial dispersion was applied to the calculations of the DIIMFP for a Si cylindrical tube or a Si cylinder clad in a SiO2 film. For the Si tube, it was found that surface excitations occurred as electrons moved near either the inner or outer surface of the tube and either inside or outside Si. Whereas, volume excitations arose only for electrons moving inside Si. Surface excitations increased, or volume excitations decreased, as electrons moved closer to the surface. For the Si cylinder clad in the SiO2 film, inelastic interactions were contributed from volume, surface, and interface excitations. Calculated results showed that the relative importance of these excitations depended on the electron distance from the surface or interface of the cylindrical system, the radius of the Si cylinder, and the thickness of the SiO2 film.en_US
dc.language.isoen_USen_US
dc.titleDielectric response theory for electron energy loss in clad cylindrical systemsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.74.045403en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume74en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000239426800095en_US
dc.citation.woscount3en_US
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