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dc.contributor.authorHou, Chih-Yuanen_US
dc.contributor.authorWu, YewChung Sermonen_US
dc.date.accessioned2014-12-08T15:16:19Z-
dc.date.available2014-12-08T15:16:19Z-
dc.date.issued2006-07-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.5667en_US
dc.identifier.urihttp://hdl.handle.net/11536/12099-
dc.description.abstractThin-film transistors (TFFs) fabricated using (III) and 112) needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (mu(FE)), 4-fold-higher on/off current ratio (I-on/I-off), and 2.4-fold-lower leakage current (I-off) compared with those of the 111-TFT.en_US
dc.language.isoen_USen_US
dc.subjectLTPSen_US
dc.subjectpoly-Sien_US
dc.subjectimprinten_US
dc.subjectthin-film transistorsen_US
dc.subjectNi-metal-induced lateral crystallizationen_US
dc.titlePerformances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grainsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.45.5667en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue7en_US
dc.citation.spage5667en_US
dc.citation.epage5670en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000239322400004-
dc.citation.woscount0-
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