Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains

doi:10.1143/JJAP.45.5667

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hou, Chih-Yuan	en_US
dc.contributor.author	Wu, YewChung Sermon	en_US
dc.date.accessioned	2014-12-08T15:16:19Z	-
dc.date.available	2014-12-08T15:16:19Z	-
dc.date.issued	2006-07-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.45.5667	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12099	-
dc.description.abstract	Thin-film transistors (TFFs) fabricated using (III) and 112) needle grains have been investigated. They were fabricated by Ni-metal-induced lateral crystallization and Ni-metal imprint-induced crystallization method. It is found that the performance of 112-TFT was far superior to that of 111-TFT. The device transfer characteristics of 112-TFT include 2.6-fold-higher field-effect mobility (mu(FE)), 4-fold-higher on/off current ratio (I-on/I-off), and 2.4-fold-lower leakage current (I-off) compared with those of the 111-TFT.	en_US
dc.language.iso	en_US	en_US
dc.subject	LTPS	en_US
dc.subject	poly-Si	en_US
dc.subject	imprint	en_US
dc.subject	thin-film transistors	en_US
dc.subject	Ni-metal-induced lateral crystallization	en_US
dc.title	Performances of Ni-induced lateral crystallization thin film transistors with (111) and (112) needle grains	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.45.5667	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS	en_US
dc.citation.volume	45	en_US
dc.citation.issue	7	en_US
dc.citation.spage	5667	en_US
dc.citation.epage	5670	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000239322400004	-
dc.citation.woscount	0	-
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