CMOS low-noise amplifier for 6-11 GHz MB-OFDM UWB wireless radio system

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DC 欄位	值	語言
dc.contributor.author	Huang, Zhe-Yang	en_US
dc.contributor.author	Huang, Che-Cheng	en_US
dc.date.accessioned	2014-12-08T15:16:20Z	-
dc.date.available	2014-12-08T15:16:20Z	-
dc.date.issued	2007	en_US
dc.identifier.isbn	978-1-4244-0796-5	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12123	-
dc.identifier.uri	http://dx.doi.org/10.1109/ISICIR.2007.4441930	en_US
dc.description.abstract	This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4dB, input and output matching lower then -8.5dB and -14.5dB, and a minimum NF of 4.0dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.	en_US
dc.language.iso	en_US	en_US
dc.title	CMOS low-noise amplifier for 6-11 GHz MB-OFDM UWB wireless radio system	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ISICIR.2007.4441930	en_US
dc.identifier.journal	2007 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS, VOLS 1 AND 2	en_US
dc.citation.spage	588	en_US
dc.citation.epage	591	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000256457800150	-
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