Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots

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DC 欄位	值	語言
dc.contributor.author	Lin, KF	en_US
dc.contributor.author	Cheng, HM	en_US
dc.contributor.author	Hsu, HC	en_US
dc.contributor.author	Hsieh, WF	en_US
dc.date.accessioned	2014-12-08T15:16:21Z	-
dc.date.available	2014-12-08T15:16:21Z	-
dc.date.issued	2006-06-26	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2218775	en_US
dc.identifier.uri	http://hdl.handle.net/11536/12131	-
dc.description.abstract	Both band gap engineering and spatial confinement of optical phonon were observed depending upon the size of ZnO quantum dots at room temperature. Size-dependent blueshifts of photoluminescence and absorption spectra reveal the quantum confinement effect. The measured Raman spectral shift and asymmetry for the E-2(high) mode caused by localization of optical phonons agree well with that calculated by using the modified spatial correlation model. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Band gap engineering and spatial confinement of optical phonon in ZnO quantum dots	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2218775	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	88	en_US
dc.citation.issue	26	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000238717200073	-
dc.citation.woscount	52	-
顯示於類別：	期刊論文

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