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dc.contributor.authorLi, ZQen_US
dc.contributor.authorZhang, DXen_US
dc.contributor.authorLin, JJen_US
dc.date.accessioned2014-12-08T15:16:22Z-
dc.date.available2014-12-08T15:16:22Z-
dc.date.issued2006-06-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2204827en_US
dc.identifier.urihttp://hdl.handle.net/11536/12142-
dc.description.abstractAl doped zinc oxide thin film was prepared by dc facing-target sputtering method and its structural, optical, and electrical transport properties have been investigated. The average transmittance of the films is greater than 90% in the wavelength region of 450-700 nm while the resistivity is as high as 3x10(-3) Omega cm. The band gap energy derived from the transmission data is 3.76 eV, which is higher than that of pure ZnO thin film. This band gap growth phenomenon cannot be explained in terms of the Burstein-Moss effect. The resistivity and Hall effect measurements suggest that the interaction between the charge carriers and phonons plays a key role in the electrical transport properties of the film between 60 and 300 K. The film exhibits negative magnetoresistance at low temperatures, which can be well described by a semiempirical expression that takes into account the third order s-d exchange Hamiltonians describing a negative part and a two-band model for positive contribution.en_US
dc.language.isoen_USen_US
dc.titleOptical and electrical transport properties of facing-target sputtered Al doped ZnO transparent filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2204827en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume99en_US
dc.citation.issue12en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000238730000117-
dc.citation.woscount30-
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