完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTsai, Kou-Chiangen_US
dc.contributor.authorWu, Wen-Faen_US
dc.contributor.authorChao, Chuen-Guangen_US
dc.contributor.authorLee, Jain-Tsaien_US
dc.contributor.authorShen, Shih-Wenen_US
dc.date.accessioned2014-12-08T15:16:29Z-
dc.date.available2014-12-08T15:16:29Z-
dc.date.issued2006-06-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.45.5495en_US
dc.identifier.urihttp://hdl.handle.net/11536/12192-
dc.description.abstractCu(Mg) alloy films have replaced pure Cu as bottom electrodes for (Ba,Sr)TiO3 (BST) capacitors used in high-frequency devices. A combined BST/Cu(Mg) structure reduced the leakage current density to 3.0 x 10(-8) A/cm(2) at 1 MV/cm, and increased the breakdown field from 0.4 to 2.4 MV/cm at 10(-6) A/cm(2), from the corresponding values of the BST/Cu structure. High-quality characteristics probably follow the formation of a self-aligned MgO layer following the deposition of a Cu(Mg) alloy by annealing in an oxygen ambient, yielding an electrode with an excellent diffusion barrier and electrical characteristics, which is therefore effective in a BST thin-film capacitor. Additionally, the bias temperature stress and time-dependent dielectric breakdown in ambient nitrogen at an electric field of up to 2 V at temperatures between 100 and 200 degrees C were considered to accelerate Cu+ ion drift.en_US
dc.language.isoen_USen_US
dc.subjectBST filmsen_US
dc.subjectCuen_US
dc.subjectCu(Mg)en_US
dc.subjectbottom electrodesen_US
dc.subjectMgOen_US
dc.titleImproving electrical properties and thermal stability of (Ba,Sr)TiO3 thin films on Cu(Mg) bottom electrodesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.45.5495en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume45en_US
dc.citation.issue6Ben_US
dc.citation.spage5495en_US
dc.citation.epage5500en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000240882800029-
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