完整後設資料紀錄
DC 欄位語言
dc.contributor.authorMeng, CCen_US
dc.contributor.authorChang, YWen_US
dc.contributor.authorTseng, SCen_US
dc.date.accessioned2014-12-08T15:16:31Z-
dc.date.available2014-12-08T15:16:31Z-
dc.date.issued2006-06-01en_US
dc.identifier.issn1531-1309en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LMWC.2006.875624en_US
dc.identifier.urihttp://hdl.handle.net/11536/12208-
dc.description.abstractThe low-phase-noise GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled-oscillator (QVCO) using transformer-based superharmonic coupling topology is demonstrated for the first time. The fully integrated QVCO at 4.87 GHz has phase noise of -131 dBc/Hz at 1-MHz offset frequency, output power of -4 dBm and the figure of merit (FOM) -198 dBc/Hz. The state-of-the-art phase noise FOM is attributed to the superior GaInP/GaAs HBT low-frequency device noise and the high quality transformer formed on the GaAs semi-insulating substrate.en_US
dc.language.isoen_USen_US
dc.subjectGaInP/GaAs heterojunction bipolar transistor (HBT)en_US
dc.subjectphase noiseen_US
dc.subjectquadrature voltage controlled oscillator (QVCO)en_US
dc.subjectsuperharmonic couplingen_US
dc.subjecttransformeren_US
dc.title4.9-GHz low-phase-noise transformer-based superharmonic-coupled GaInP/GaAs HBT QVCOen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LMWC.2006.875624en_US
dc.identifier.journalIEEE MICROWAVE AND WIRELESS COMPONENTS LETTERSen_US
dc.citation.volume16en_US
dc.citation.issue6en_US
dc.citation.spage339en_US
dc.citation.epage341en_US
dc.contributor.department資訊工程學系zh_TW
dc.contributor.departmentDepartment of Computer Scienceen_US
dc.identifier.wosnumberWOS:000238069900007-
dc.citation.woscount17-
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