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dc.contributor.authorWu, TCen_US
dc.contributor.authorHorng, Len_US
dc.contributor.authorWu, JCen_US
dc.contributor.authorHsiao, CWen_US
dc.contributor.authorKolacek, Jen_US
dc.contributor.authorYang, TJen_US
dc.date.accessioned2014-12-08T15:16:35Z-
dc.date.available2014-12-08T15:16:35Z-
dc.date.issued2006-05-15en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physc.2005.12.047en_US
dc.identifier.urihttp://hdl.handle.net/11536/12247-
dc.description.abstractWe have investigated the vortex dynamics in the niobium films having a spacing-graded array of pinning sites. The samples were fabricated by using electron beam lithography through a lift-off technique. The pinning sites of 200 nm in diameter were arranged with a constant hole-defect separation in x-axis direction and graded separation in y-axis direction from 392 nm to 408 nm. The magneto-resistance measurements and current-voltage characteristics were explored with the external magnetic field applied perpendicular to the film plane. Dc current-voltage measured at matching field revealed two distinct curves resulted from the positive and negative applied current directions, respectively. This is believed to be due to an asymmetry pinning potential formed in the spacing-graded array of holes, giving rise to asymmetry Lorentz forces. De voltage drop measured with respect to the ac current applied along the x-axis of the sample showed two separated maxima, which can be explained using the dynamics of pinned vortex lattice and interstitial vortices in the asymmetry pinning landscape. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectmatching fielden_US
dc.subjectvortex dynamicsen_US
dc.subjectthin filmsen_US
dc.titleVortex dynamics in spacing-graded array of defects on a niobium filmen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physc.2005.12.047en_US
dc.identifier.journalPHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONSen_US
dc.citation.volume437-38en_US
dc.citation.issueen_US
dc.citation.spage353en_US
dc.citation.epage356en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000238395700084-
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