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| A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | 116 |
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| 十一月 2025 | 二月 2026 | |
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| A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | 2 | 6 |
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| 000237369800014.pdf | 18 |
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