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| A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | 110 |
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| A novel transient characterization technique to investigate trap properties in HfSiON gate dielectric MOSFETs - From single electron emission to PBTI recovery transient | 0 | 0 | 0 | 0 | 0 | 2 | 0 |
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