Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 荊鳳德 | en_US |
| dc.date.accessioned | 2015-05-12T02:58:11Z | - |
| dc.date.available | 2015-05-12T02:58:11Z | - |
| dc.date.issued | 2015-05-01 | en_US |
| dc.identifier.govdoc | H01L021/8238 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/122775 | - |
| dc.description.abstract | 本發明提出一種利用新穎的自動對準低溫超淺接面製造具有極低臨界電壓(Vt)金屬閘極/高介電常數(材質之互補金氧半場效電晶體(CMOSFETs)之方法，其中該方法係採用與超大型積體電路(VLSI)相容之前閘極製程。當等效氧化層厚度(EOT)為1.2奈米時，p型及n型金氧半導體(MOS)分別測得5.3及4.1eV之良好有效功函數、+0.05及0.03V之低臨界電壓、90及243cm2/Vs之高遷移率以及在85oC下小於32mV之低偏壓溫度不穩定性(10MV/cm，1hr)。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 利用自動對準低溫淺接面製造具有極低臨界電壓金屬閘極／高介電常數材質之互補金氧半場效電晶體之方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I483345 | zh_TW |
| Appears in Collections: | Patents | |
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