Non-polar plane of wurtzite structure material

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DC 欄位	值	語言
dc.contributor.author	Chang Li	en_US
dc.contributor.author	Ho Yen-Teng	en_US
dc.date.accessioned	2015-05-12T02:59:41Z	-
dc.date.available	2015-05-12T02:59:41Z	-
dc.date.issued	2014-12-30	en_US
dc.identifier.govdoc	H01L029/04	zh_TW
dc.identifier.govdoc	C30B023/02	zh_TW
dc.identifier.govdoc	C30B023/06	zh_TW
dc.identifier.govdoc	C30B023/08	zh_TW
dc.identifier.govdoc	C30B025/18	zh_TW
dc.identifier.govdoc	C30B025/06	zh_TW
dc.identifier.govdoc	C30B029/16	zh_TW
dc.identifier.govdoc	C30B029/40	zh_TW
dc.identifier.govdoc	H01L029/20	zh_TW
dc.identifier.govdoc	H01L029/24	zh_TW
dc.identifier.govdoc	H01L021/02	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/122838	-
dc.description.abstract	The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	Non-polar plane of wurtzite structure material	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	08921851	zh_TW
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