標題: Lateral Diffused Metal Oxide Semiconductor
作者: Su Chao-Yuan
Wu Ching-Yi
Chen Hung-Bin
Chang Chun-Yen
公開日期: 30-四月-2015
摘要: A lateral diffused N-type metal oxide semiconductor device includes a semiconductor substrate, an epi-layer on the semiconductor substrate, a patterned isolation layer on the epi-layer, a N-type double diffused drain (NDDD) region in a first active region of the patterned isolation layer, a N+ heavily doped drain region disposed in the NDDD region, a P-body diffused region disposed in a second active region of the patterned isolation layer, a neighboring pair of a N+ heavily doped source region and a P+ heavily doped source region disposed in the P-body diffused region, a first gate structure disposed above a channel region of the patterned isolation layer and a second gate structure disposed above the second active region. The second gate structure and the first gate structure are spaced at a predetermined distance. A making method of the NDDD region includes using an ion implant and an epitaxy layer doping.
官方說明文件#: H01L029/78
H01L029/10
H01L029/08
URI: http://hdl.handle.net/11536/122844
專利國: USA
專利號碼: 20150115362
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