INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen Kuan-Neng	en_US
dc.contributor.author	Chang Yao-Jen	en_US
dc.date.accessioned	2015-05-12T02:59:52Z	-
dc.date.available	2015-05-12T02:59:52Z	-
dc.date.issued	2015-02-05	en_US
dc.identifier.govdoc	H01L023/538	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/122870	-
dc.description.abstract	An interconnection structure of a semiconductor device is provided, where the interconnection structure is constructed in a semiconductor substrate. The interconnection structure includes a first through silicon via and a second through silicon via both penetrating the semiconductor substrate, and the first through silicon via is spaced from the second through silicon via by a distance ranged from 2 μm to 40 μm.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20150035165	zh_TW
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。