Full metadata record
DC FieldValueLanguage
dc.contributor.authorKer, MDen_US
dc.contributor.authorChen, SLen_US
dc.contributor.authorTsai, CSen_US
dc.date.accessioned2014-12-08T15:16:40Z-
dc.date.available2014-12-08T15:16:40Z-
dc.date.issued2006-05-01en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSSC.2006.872704en_US
dc.identifier.urihttp://hdl.handle.net/11536/12293-
dc.description.abstractA new charge pump circuit with consideration of gateoxide reliability is designed with two pumping branches in this paper. The charge transfer switches in the new proposed circuit can be completely turned on and turned off, so its pumping efficiency is higher than that of the traditional designs. Moreover, the maximum gate-source and gate-drain voltages of all devices in the proposed charge pump circuit do not exceed the normal operating power supply voltage (VDD). Two test chips have been implemented in a 0.35-mu m 3.3-V CMOS process to verify the new proposed charge pump circuit. The measured output voltage of the new proposed four-stage charge pump circuit with each pumping capacitor of 2 pF to drive the capacitive output load is around 8.8 V under 3.3-V power supply (VDD = 3.3 V), which is limited by the junction breakdown voltage of the parasitic pn-junction in the given process. The new proposed circuit is suitable for applications in low-voltage CMOS processes because of its high pumping efficiency and no overstress across the gate oxide of devices.en_US
dc.language.isoen_USen_US
dc.subjectbody effecten_US
dc.subjectcharge pump circuiten_US
dc.subjectgate-oxide reliabilityen_US
dc.subjecthigh-voltage generatoren_US
dc.subjectlow voltageen_US
dc.titleDesign of charge pump circuit with consideration of gate-oxide reliability in low-voltage CMOS processesen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSSC.2006.872704en_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume41en_US
dc.citation.issue5en_US
dc.citation.spage1100en_US
dc.citation.epage1107en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000237210500011-
dc.citation.woscount61-
Appears in Collections:Articles


Files in This Item:

  1. 000237210500011.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.