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dc.contributor.authorChiou, BSen_US
dc.contributor.authorLee, JHen_US
dc.date.accessioned2014-12-08T15:02:34Z-
dc.date.available2014-12-08T15:02:34Z-
dc.date.issued1996-06-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://hdl.handle.net/11536/1233-
dc.description.abstractIn this study, the etching of indium tin oxide (ITO) films with various acidic solutions are studied and the activation energies for etching calculated. On the basis of the etching data, a diluent hydrochloric acid is selected for further investigation. The surface morphology of the HCl-etched films are examined. Pinholes resulted from enhanced etching of the grain boundaries are found. Films with larger grains exhibit coarser etched surfaces. The opto-electrical properties of the films are studied and the figure of merits for these films evaluated.en_US
dc.language.isoen_USen_US
dc.titleEtching of rf magnetron-sputtered indium tin oxide filmsen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume7en_US
dc.citation.issue3en_US
dc.citation.spage241en_US
dc.citation.epage246en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UT35300016-
dc.citation.woscount4-
Appears in Collections:Articles