完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | Chiou, BS | en_US |
dc.contributor.author | Lee, JH | en_US |
dc.date.accessioned | 2014-12-08T15:02:34Z | - |
dc.date.available | 2014-12-08T15:02:34Z | - |
dc.date.issued | 1996-06-01 | en_US |
dc.identifier.issn | 0957-4522 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1233 | - |
dc.description.abstract | In this study, the etching of indium tin oxide (ITO) films with various acidic solutions are studied and the activation energies for etching calculated. On the basis of the etching data, a diluent hydrochloric acid is selected for further investigation. The surface morphology of the HCl-etched films are examined. Pinholes resulted from enhanced etching of the grain boundaries are found. Films with larger grains exhibit coarser etched surfaces. The opto-electrical properties of the films are studied and the figure of merits for these films evaluated. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Etching of rf magnetron-sputtered indium tin oxide films | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | en_US |
dc.citation.volume | 7 | en_US |
dc.citation.issue | 3 | en_US |
dc.citation.spage | 241 | en_US |
dc.citation.epage | 246 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1996UT35300016 | - |
dc.citation.woscount | 4 | - |
显示于类别: | Articles |