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DC 欄位語言
dc.contributor.authorWang, LYen_US
dc.contributor.authorTang, CSen_US
dc.contributor.authorChu, CSen_US
dc.date.accessioned2014-12-08T15:16:46Z-
dc.date.available2014-12-08T15:16:46Z-
dc.date.issued2006-05-01en_US
dc.identifier.issn1386-9477en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.physe.2005.12.127en_US
dc.identifier.urihttp://hdl.handle.net/11536/12342-
dc.description.abstractIn this work, we consider a Rashba-type quantum channel (RQC) consisting of one AC-biased finger-gates (FG) that orient perpendicularly and located above the RQC. Such an AC-biased FG gives rise to a local time-modulation in the Rashba coupling parameter, and is shown recently to generate a DC spin current [L.Y. Wang, C.S. Tang, C.S. Chu, Cond-mat/0409291, 2004]. No charge current, however, is generated in this configuration. We explore the robustness of such DC spin current generation against elastic scattering in the RQC. The effect of backscattering is studied by introducing a static barrier that is uniform in the transverse dimension. The effects of both backscattering and subband mixing is studied by introducing a static partial-barrier that is spatially localized and non-uniform in the transverse dimension. In addition, we compare the cases of attractive and repulsive partial-barriers. It is found that attractive partial-barrier gives rise to additional DC spin current structures due to resonant inter-subband and inter-sideband transition to quasi-bound states formed just beneath subband thresholds. (c) 2006 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectRashba coupling parameteren_US
dc.subjectspin currenten_US
dc.subjectinter-subbanden_US
dc.subjectbackscatteringen_US
dc.subjectinter-sidebanden_US
dc.subjectquasi-bound statesen_US
dc.titleEffects of an elastic scatterer on the DC spin current generation in a Rashba-type quantum channelen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.physe.2005.12.127en_US
dc.identifier.journalPHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURESen_US
dc.citation.volume32en_US
dc.citation.issue1-2en_US
dc.citation.spage450en_US
dc.citation.epage453en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000237842200115-
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