完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, YS | en_US |
dc.contributor.author | Cheng, KW | en_US |
dc.contributor.author | Yu, C | en_US |
dc.contributor.author | Lee, SF | en_US |
dc.contributor.author | Chen, DC | en_US |
dc.contributor.author | Wu, SH | en_US |
dc.contributor.author | Lin, MT | en_US |
dc.contributor.author | Liou, Y | en_US |
dc.contributor.author | Wu, KT | en_US |
dc.contributor.author | Yao, YD | en_US |
dc.date.accessioned | 2014-12-08T15:16:49Z | - |
dc.date.available | 2014-12-08T15:16:49Z | - |
dc.date.issued | 2006-04-15 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2173624 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/12363 | - |
dc.description.abstract | Domain wall pinning force in the junctions (corners), with different shapes of square, semicircle, or triangle, of half-ring in-series wires is considered to study the current injection induced wall movements. This geometry has less thermal activation at the region of domain wall nucleation in contrast to notch structures. The wires with square corners have the largest domain pinning force to resist polarized current-induced magnetization reversal, judging from the largest slope in the current-field dependence (Delta I/Delta H=0.274). (C) 2006 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Vortex domain wall depinning by polarized current in submicron half-ring wires | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2173624 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 99 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000237404200381 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |