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dc.contributor.authorJian, WBen_US
dc.contributor.authorLu, WGen_US
dc.contributor.authorFang, Jen_US
dc.contributor.authorLan, MDen_US
dc.contributor.authorLin, JJen_US
dc.date.accessioned2014-12-08T15:16:49Z-
dc.date.available2014-12-08T15:16:49Z-
dc.date.issued2006-04-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2171130en_US
dc.identifier.urihttp://hdl.handle.net/11536/12366-
dc.description.abstractA high-temperature organic solution approach was applied to prepare crystalline PbSe quantum dots. It is diamagnetic with an atomic susceptibility of similar to-1.0x10(-4) emu/mol Oe for bulk PbSe. The core diamagnetism of bulk PbSe was subtracted from our raw data. While transforming into the nanophase, orbital susceptibility including finite-size corrections to the Landau susceptibility has been observed. A paramagnetic zero-field peak with a large diamagnetic susceptibility in high fields exhibit in the field dependent susceptibility as characteristics of the Landau orbital susceptibility. At low temperatures and fields the paramagnetism dominates the contribution of magnetization of quantum dots while the diamagnetism dominates at high temperatures and fields. All these measurements, showing paramagnetism at low fields, indicate the existence of spontaneous magnetization in the quantum dot. In addition, we have observed profound hysteresis loops implying ferromagnetism among the quantum dots even at room temperature, which is spontaneous magnetization in the quantum dot and of the ferromagnetic order among these quantum dots. (C) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleSpontaneous magnetization and ferromagnetism in PbSe quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2171130en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume99en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000237404200617-
dc.citation.woscount3-
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