標題: Improved NBTI in SiN-capped PMOSFETs with ultra-thin HfO2 buffer
作者: Lu, Ching-Sen
Lin, Horng-Chih
Chen, Ying-Hung
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: Although a compressive SiN capping could effectively boost the drive current of PMOS devices, it may concomitantly worsen the NBTI characteristics owing to the high hydrogen content in the SiN layer which might diffuse to the channel region during processing. To address this issue, inserting a thin 3nm HfO2 buffer layer between the gate and SiN capping is proposed and demonstrated to improve NBTI reliability without sacrificing the performance enhancement by SiN capping.
URI: http://hdl.handle.net/11536/12368
ISBN: 978-1-4244-0584-8
期刊: 2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Proceedings of Technical Papers
起始頁: 54
結束頁: 55
Appears in Collections:Conferences Paper