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dc.contributor.authorWu, TCen_US
dc.contributor.authorHorng, Len_US
dc.contributor.authorWu, JCen_US
dc.contributor.authorHsiao, CWen_US
dc.contributor.authorKolacek, Jen_US
dc.contributor.authorYang, TJen_US
dc.date.accessioned2014-12-08T15:16:50Z-
dc.date.available2014-12-08T15:16:50Z-
dc.date.issued2006-04-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2176143en_US
dc.identifier.urihttp://hdl.handle.net/11536/12370-
dc.description.abstractNiobium thin films with spacing-graded array of submicrometer-scaled holes had been fabricated using electron beam lithography through a lift-off technique. The magnetoresistance measurements and current-voltage characteristics were carried out with the external magnetic field applied perpendicular to the film plane, in which commensurable effects were observed in both experiments. The magnetoresistance with positive/negative directions of dc current revealed identical curves except the dips at matching fields separated. Two distinct current-voltage curves, which resulted from the positive and negative applied current directions, respectively, were discerned when the external magnetic field was fixed at the matching field, which is believed to be due to asymmetry pinning potential in the spacing-graded array of holes. In addition, ac current-voltage curve measured at matching field showed a ratchet bump along with another extra peak associated with incommensurable effect. (C) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleThe ac effect of vortex pinning in the arrays of defect sites on Nb filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2176143en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume99en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000237404200557-
dc.citation.woscount3-
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