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dc.contributor.authorShen, CTen_US
dc.contributor.authorLai, CHen_US
dc.contributor.authorHuang, PHen_US
dc.contributor.authorHsu, SYen_US
dc.contributor.authorChung, TYen_US
dc.date.accessioned2014-12-08T15:16:50Z-
dc.date.available2014-12-08T15:16:50Z-
dc.date.issued2006-04-15en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2172897en_US
dc.identifier.urihttp://hdl.handle.net/11536/12377-
dc.description.abstractThe temperature dependence of Co anisotropy on a nano-FeOx layer was studied in the structure of IrMn/Co (FM1)/FeOx/Co (FM2). An anisotropy transition of the FM2 was observed from a combination of uniaxial and unidirectional anisotropies at room temperature (RT) to unidirectional anisotropy at temperature below 80 K through field cooling process. Various ferromagnetic (FM) and antiferromagnetic (AFM) components existing in the FeOx layer were attributable to the observed anisotropy of FM2. AFM domains with T-N higher than room temperature were responsible for the observed uniaxial anisotropy at RT and AFM domains with T-N of 80 K were accountable for the anisotropy transition, below which the unidirectional anisotropy became dominant. In addition, the direction of the shifted loop could be determined by the cooling field direction. (C) 2006 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleAnisotropy transition of Co in IrMn/Co/FeOx/Co by field coolingen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2172897en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume99en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000237404200198-
dc.citation.woscount0-
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