標題: | Improvement of Resistive Switching Uniformity for Al-Zn-Sn-O-Based Memory Device With Inserting HfO2 Layer |
作者: | Liu, Po-Tsun Fan, Yang-Shun Chen, Chun-Ching 光電工程學系 Department of Photonics |
關鍵字: | Resistive switching;RRAM;AZTO;localized conducting filament |
公開日期: | 1-十二月-2014 |
摘要: | This letter demonstrates the characteristics of a resistive switching memory [resistive random access memory (RRAM)] device with a bilayer structure of aluminum-zinc-tin-oxide (AZTO) and HfO2-film layers. As for the RRAM operation, the formation and rupture processes of the conductive filaments can be confined in the HfO2 layer with low-concentration oxygen vacancy. The resistive switching stability and electrical uniformity of bilayer AZTO/HfO2 RRAM device are obviously enhanced as compared with the one only with a single layer of AZTO film. In addition, a physical mechanism for uniformity improvement is proposed by the localized conduction of conducting filaments. |
URI: | http://dx.doi.org/10.1109/LED.2014.2363491 http://hdl.handle.net/11536/123864 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2014.2363491 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 35 |
Issue: | 12 |
起始頁: | 1233 |
結束頁: | 1235 |
顯示於類別: | 期刊論文 |