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dc.contributor.authorSu, Sheng-Kaien_US
dc.contributor.authorVoskoboynikov, Oleksandren_US
dc.contributor.authorLi, Liang-Chenen_US
dc.contributor.authorSuen, Yuen-Wuuen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2015-07-21T08:28:30Z-
dc.date.available2015-07-21T08:28:30Z-
dc.date.issued2014-11-15en_US
dc.identifier.issn0031-9015en_US
dc.identifier.urihttp://dx.doi.org/10.7566/JPSJ.83.114703en_US
dc.identifier.urihttp://hdl.handle.net/11536/123903-
dc.description.abstractThe properties of GaAs polaritons propagating in a magnetic field have been investigated using a self-designed ellipsometry system with an oblique incident angle. Interesting fine structures, which have not been reported, have been observed and their magneto-optical behavior cannot be explained by the known properties of excitonic states. Treating the surface and the growth interface as boundaries, we attribute the fine structures to the interference among various polariton modes. A model considering the polariton spatial dispersion and exciton effective mass increase induced by its center of mass and relative motion coupling is proposed to explain the magnetic response of interference ellipsometry spectra.en_US
dc.language.isoen_USen_US
dc.titleGaAs Polariton Interference in Magnetic Field: Oblique Incident Ellipsometry Measurementen_US
dc.typeArticleen_US
dc.identifier.doi10.7566/JPSJ.83.114703en_US
dc.identifier.journalJOURNAL OF THE PHYSICAL SOCIETY OF JAPANen_US
dc.citation.volume83en_US
dc.citation.issue11en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000344653100026en_US
dc.citation.woscount0en_US
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