Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor

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DC 欄位	值	語言
dc.contributor.author	Chung, Pei-Kang	en_US
dc.contributor.author	Yen, Shun-Tung	en_US
dc.date.accessioned	2015-07-21T11:20:59Z	-
dc.date.available	2015-07-21T11:20:59Z	-
dc.date.issued	2014-11-14	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4901331	en_US
dc.identifier.uri	http://hdl.handle.net/11536/123904	-
dc.description.abstract	We demonstrate the hot phonon effect on thermal radiation in the terahertz and far-infrared regime. A pseudomorphic high electron mobility transistor is used for efficiently exciting hot phonons. Boosting the hot phonon population can enhance the efficiency of thermal radiation. The transistor can yield at least a radiation power of 13 mu W and a power conversion efficiency higher than a resistor by more than 20%. (C) 2014 AIP Publishing LLC.	en_US
dc.language.iso	en_US	en_US
dc.title	Enhanced thermal radiation in terahertz and far-infrared regime by hot phonon excitation in a field effect transistor	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4901331	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	116	en_US
dc.citation.issue	18	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000345216300001	en_US
dc.citation.woscount	0	en_US
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