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dc.contributor.authorCheng, Pi-Yingen_US
dc.contributor.authorHsiao, Wen-Tseen_US
dc.contributor.authorChung, Chien-Kaien_US
dc.contributor.authorTseng, Shih-Fengen_US
dc.contributor.authorLiao, Ien-Changen_US
dc.date.accessioned2015-07-21T11:20:32Z-
dc.date.available2015-07-21T11:20:32Z-
dc.date.issued2014-09-01en_US
dc.identifier.issn1340-6000en_US
dc.identifier.urihttp://hdl.handle.net/11536/123991-
dc.description.abstractTo accomplish an electrode patterning in large area, we present a high speed stitching technique used in an ultraviolet laser processing system and investigate the interaction between laser beams and indium tin oxide (ITO) thin films deposited on glass substrates. After optimizing the process parameters of the laser direct imaging (LDI) for the large-area electrode patterning, the ablated lines looked like regularly fish-scale marks of about a 40 mu m diameter and a 120 nm depth around the processing path. The parameters includes the laser power of 1 W, the scanning speed of galvanometers of 800 mm/s, and the laser pulse repetition frequency of 50 kHz. Moreover, the resistance value of the ablated ITO thin film is larger than 200M Omega that is electrically insulated from the other regions of electrode structure. LDI technology with UV laser beam has great potential applications in patterning on wafer or sapphire substrates and patterning a conductive layer deposited on the touch panels for semiconductor and optoelectric industries, respectively. (C) 2014 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.subjectelectrode patterningen_US
dc.subjecthigh speed stitching techniqueen_US
dc.subjectultraviolet laseren_US
dc.subjectindium tin oxide (ITO)en_US
dc.subjectlaser direct imaging (LDI)en_US
dc.titleLaser Direct Imaging of Transparent Indium Tin Oxide Electrodes Using High Speed Stitching Techniquesen_US
dc.typeArticleen_US
dc.identifier.journalOPTICAL REVIEWen_US
dc.citation.volume21en_US
dc.citation.spage732en_US
dc.citation.epage735en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.identifier.wosnumberWOS:000344641800048en_US
dc.citation.woscount0en_US
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